[16p-PA04-1~24] 13.7 化合物及びパワーデバイス・プロセス技術・評価

▲ [16p-PA04-13] Comparison of Thermal and ArF Excimer Laser Activation of Mg-doped GaN

〇MariaEmma Castil Villamin¹、Naotaka Iwata¹ (1.Toyota Tech Inst)

キーワード：pGaN laser annealing, RTA, thermal annealing

Excimer laser annealing has recently been proposed as an alternative to thermal annealing in the activation of Mg-doped GaN devices [1-2]. Compared to conventional thermal annealing where the entire wafer is subjected to high temperature (in the order of 800°C), laser annealing can be used to anneal a small target area (localized activation), which can be useful in fabricating complex device geometries. In addition, only the top epitaxial layers are annealed for laser annealing, which can reduce the thermal stress to the substrate. This study aims to investigate the effectiveness of ArF (193nm) laser annealing in the activation of Mg-doped GaN and compare this to conventional rapid thermal annealing (RTA).