[16p-PA04-1~24] 13.7 Compound and power devices, process technology and characterization

[16p-PA04-16] Low on voltage and high current GaN heterojunction diode for energy harvesting

〇Kouki Hino¹, MariaEmma Villamin¹, Iwata Naotaka¹ (1.Toyota Tech. Inst.)

Keywords:GaN, diode, energy harvesting

Power supply to many IoT sensor terminals is an issue, and the use of environmental energy such as radio waves and vibrations is required. The purpose of this research is to realize a GaN heterojunction diode for energy harvesting that exhibits 0V on-voltage and high current characteristics, and the gate structure was investigated. The fabricated gated-anode diode with p-GaN gate mesa length of 4µm exhibited a low on-voltage of 0.1V and a high current of over 1A/mm.