2023年第70回応用物理学会春季学術講演会

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13 半導体 » 13.7 化合物及びパワーデバイス・プロセス技術・評価

[16p-PA04-1~24] 13.7 化合物及びパワーデバイス・プロセス技術・評価

2023年3月16日(木) 13:30 〜 15:30 PA04 (ポスター)

13:30 〜 15:30

[16p-PA04-20] Analysis of Lateral Superjunction Silicon Power Device with Multiple Layers by TCAD Simulation

〇(M2)Peilin Ji1、Munetoshi Fukui1、Takuya Saraya1、Masaharu Kobayashi1、Toshiro Hiramoto1 (1.The Univ. of Tokyo)

キーワード:superjunction, power device

One of the advantages of a lateral power device over a vertical one is that it is easier to integrate with other transistors. The lateral superjunction (SJ) device is promising as a future integrated power device with high breakdown voltage (VBD) and low specific on-resistance (RON, sp). However, one of the demerits of SJ devices is that VBD is very sensitive to the balance of p/n concentrations (NA and ND). In this work, the device characteristics of SJ devices with two layers and multiple layers were simulated and analyzed.