13:30 〜 15:30
▲ [16p-PA04-20] Analysis of Lateral Superjunction Silicon Power Device with Multiple Layers by TCAD Simulation
キーワード:superjunction, power device
One of the advantages of a lateral power device over a vertical one is that it is easier to integrate with other transistors. The lateral superjunction (SJ) device is promising as a future integrated power device with high breakdown voltage (VBD) and low specific on-resistance (RON, sp). However, one of the demerits of SJ devices is that VBD is very sensitive to the balance of p/n concentrations (NA and ND). In this work, the device characteristics of SJ devices with two layers and multiple layers were simulated and analyzed.