[16p-PA04-1~24] 13.7 Compound and power devices, process technology and characterization

[16p-PA04-19] Fabrication of the Ag/Si Schottky Barrier Diode by Patterning of Ag Nanoink: Effects of the Sintering Conditions for Diode Characteristics

〇Masashi Saito¹, Toshiyuki Tamai¹ (1.ORIST)

Keywords:Silver nanoparticle, Schottky barrier diode, Nanoink

The printed electronics enables the fabrication of a variety of devices and is becoming important as critical techniques for some applications in diverse areas. Fine line fabrication, variation of materials, and improvemnt of processes have been demontrated, however the junctions formed at the contact between printed electrodes and semiconductors remain a crucial challenge. We have demonstarted fabrication of the electrode for understanding of the metal/semiconductor junctions, in which the silver nanoink was ptinted on silicon substrate. The fabricated devices including Ag/Si junctions showed typical Schottky contact behavior from I–V analysis, and then the effects of sintering conditions for electrical characteristics were investigated.