[16p-PA04-1~24] 13.7 Compound and power devices, process technology and characterization

[16p-PA04-22] Comparison of body diode recovery characteristics of 650V power devices

〇Yoshiyuki Hattori¹, Tetsu Kachi² (1.Daido Univ., 2.Nagoya Univ. IMaSS)

Keywords:power semiconducter device, body diode

As power devices with breakdown voltage of 650 V, Si-RC-IGBT, Si-Super Junction MOSFET, SiC- MOSFET, and Cascode GaN-FET are commercially available. In this study, we compared the recovery characteristics of the body diodes of the above four devices, which consist of one chip, have the same rating (breakdown voltage of 650 V, drain current of 40A) and the same package (TO-247).