[16p-PA04-1~24] 13.7 Compound and power devices, process technology and characterization

[16p-PA04-5] Simulation of critical angles for channeled ion implantation into 4H-SiC

〇Tomoaki Nishimura¹ (1.Hosei Univ.)

Keywords:SiC, channeling implantation, critical angle

The critical angle is an indicator of whether channeled ion implantation is avairable. There is a simple formula that gives the critical angle near the surface, but it is difficult to predict the critical angle for deeper layers. The author has developed a program for calculating incident ion trajectories in crystals and implantation (scatGUI), which can reproduce the critical angles at the surface and in deep layers.