[16p-PA04-1~24] 13.7 Compound and power devices, process technology and characterization

[16p-PA04-4] Fabrication Process of Double-Implanted Metal-Oxide-Semiconductor Field-Effect Transistor of 4H-SiC Utilizing Wet Oxidation

〇Yusuke Sato^1,2, Satoshi Watanabe², Masao Sakuraba^1,2, Shigeo Sato^1,2 (1.Tohoku Univ., 2.RIEC)

Keywords:4H-SiC, Wet oxidation, MOSFET

In this study, fabrication process of 4H-SiC MOSFET utilizing wet oxidation was developed and the transistor operation was confirmed. While the drain current can be modulated and controlled over 6 orders of magnitude by applying a positive gate voltage, process development is needed to improve the problems of reduced channel mobility and increased Al/n⁺-type SiC contact resistance. In addition, the parasitic bipolar effect may have become apparent, and ion implantation conditions need to be reexamined to lower p-Well and Al/p-type SiC contact resistance.