[16p-PA04-1~24] 13.7 Compound and power devices, process technology and characterization

[16p-PA04-7] Photoelectrochemical etching of AlGaN/GaN heterostructure and control of reaction rates

〇Takuya Togashi¹, Yugo Oki¹, Yoshito Osawa¹, Ryota Ochi¹, Taketomo Sato¹ (1.RCIQE)

Keywords:semiconductor, GaN