[16p-PA08-1~18] 6.3 Oxide electronics

▲ [16p-PA08-11] Pre-annealing effect on transport properties of γ-Al₂O₃/SrTiO₃ heterostructure

〇JIWON YANG¹, Taizo Mori¹, Mikk Lippmaa¹ (1.ISSP, Univ. of Tokyo)

Keywords:Oxide thin film, Heterostructure, Pulsed laser deposition

2DEG system at the cubic γ-Al₂O₃/SrTiO₃ interface where the carriers are donated by oxygen vacancies has attracted attention because of its high carrier mobility. However, the heterostructures have been grown on substrates after annealing the SrTiO₃ substrate in oxygen, which is known to generate Sr vacancies in the substrate surface layer. As the transport properties of SrTiO₃ are very sensitive to lattice defects, such pre-annealing may affect the transport properties. Therefore, in this work, γ-Al₂O₃/SrTiO₃ heterostructures are fabricated under moderate pre-annealing conditions and we investigate the transport properties of the heterostructures.