[16p-PA08-1~18] 6.3 酸化物エレクトロニクス

▲ [16p-PA08-9] Epitaxial Growth of Meta-stable Hf_0.5Zr_0.5O₂

〇(D)Yufan Shen¹、Daisuke Kan¹、Yuichi Shimakawa¹ (1.Kyoto Univ. ICR)

キーワード：ferroelectric

Meta-stable oxides can be epitaxially stabilized via heterointerfaces. Recently, it was shown that the meta-stable orthorhombic fluorite oxide Hf_0.5Zr_0.5O₂ (HZO) films were epitaxially grown on perovskite oxides. However, how the meta-stable structure of HZO can be stabilized on the perovskite oxides’ surfaces is still unclear. In this study, by pulsed laser deposition, we epitaxially grew HZO thin films on (100) SrTiO₃ (STO) substrates, which were buffered by either La_0.7Sr_0.3MnO₃ and LaMnO₃, and investigated structural and ferroelectric properties of HZO films.