[17a-A301-1~9] 13.7 Compound and power devices, process technology and characterization

[17a-A301-3] Ampere-Class β-Ga₂O₃ Heterojunction Barrier Schottky Diode Fabrication and Its Switching Evaluation

〇Akio Takatsuka¹, Hironobu Miyamoto¹, Kohei Sasaki¹, Akito Kuramata¹ (1.Novel Crystal Technology, Inc.)

Keywords:gallium oxide, junction barrier Schottky diode, heterojunction

We have successfully fabricated ampere-class β-Ga₂O₃ heterounction barrier schottky (JBS) diodes for the first time. A maximum forward current of 3.5 A and a maximum breakdown voltage of -875 V were confirmed from forward I-V and reverse J-V characteristics, respectively. A double-pulse test was also conducted, confirming high-speed switching operation comparable to that of Schottky barrier diodes.