[17a-A301-1~9] 13.7 Compound and power devices, process technology and characterization

[17a-A301-4] RF Characteristics of Lateral Ga₂O₃ MOSFET with (Al_xGa_1-x)₂O₃ Back Barrier

〇Takumi Ohtsuki¹, Takafumi Kamimura¹, Masataka Higashiwaki^1,2 (1.NICT, 2.Osaka Metropolitan Univ.)

Keywords:gallium oxide

Beta-Ga₂O₃ is attracting attention as a power semiconductor material. Due to its high chemical stability and radiation resistance, it is expected to be applied to wireless communication equipment under harsh environments. So far, we have been developing a lateral RF Ga₂O₃ MOSFET with a gate length of sub-0.1 um, but in order to improve the RF characteristics, it is necessary to suppress the short-channel effect due to the decrease of the gate length. In this study, we introduce (Al_xGa_1-x)₂O₃ back barrier layer into lateral Ga₂O₃ MOSFET for the purpose of suppressing the short-channel effect, and evaluate its RF characteristics.