[17a-A301-1~9] 13.7 Compound and power devices, process technology and characterization

[17a-A301-5] Investigation of SiO₂/β-Ga₂O₃(001) band alignment differences by interface formation processes

〇Daiki Takeda¹, Takashi Onaya², Toshihide Nabatame³, Koji Kita^1,2 (1.School of Eng., The Univ. of Tokyo, 2.School of Frontier Sci., The Univ. of Tokyo, 3.NIMS)

Keywords:Ga2O3, band alignment

The differences in band alignment of SiO₂/β-Ga₂O₃(001) fabricated by different interface formation processes were evaluated. EB deposition or ALD was used for SiO2 deposition, and oxygen annealing was performed at 600°C or 1000°C for 1~3 hours after deposition. As a result, there was almost no change in the valence band offset with annealing time for both the EB deposition and ALD method. In the ALD, the valence band offset did not change significantly with annealing temperature, whereas in the EB deposition method, the valence band offset became significantly smaller when annealing was performed at high temperatures.