[17a-A301-1~9] 13.7 Compound and power devices, process technology and characterization

[17a-A301-6] Normally-off β-Ga₂O₃ trench MOSFET with nitrogen-doped well layer.

〇Daiki Wakimoto¹, Chia-Hung Lin¹, Quang Tu Thieu¹, Hironobu Miyamoto¹, Kohei Sasaki¹, Akito Kuramata¹ (1.NCT)

Keywords:beta-Gallium Oxide, vertical MOS transistor, Nitrogen-doped epi

Due to the p-type conductive layer fabrication method for Ga₂O₃ has not been established, we have so far realized vertical devices with threshold voltage V_th>0 V using submicron fin channel structures. On the other hand, a transistor with normally-off characteristics has recently been reported by nitrogen doped β-Ga₂O₃. Therefore, we fabricated a vertical trench MOSFET with a fin width of 2 µm using an nitrogen doped epitaxial channel, and obtained good characteristics of V_th 1.3 V, specific on-resistance 2.9 mΩ・cm², and field-effect mobility 100 cm²/Vs.