10:45 AM - 11:00 AM
[17a-A301-7] Proposal of Drift Resistance Free-Structure for Diamond MOSFET
Keywords:Diamond, MOSFET, Drift resistance
Since MOSFETs, in principle, exhibit normally-off characteristics, they are excellent in reliability and energy saving, and power devices using Si and SiC are widely used. Diamond has a higher dielectric breakdown field and carrier mobility than these materials, and is a material that is expected to withstand even higher breakdown voltage and frequency. We propose a structure that takes advantage of the deep impurity level, which is one of the important issues in diamond.