[17a-B401-1~9] 15.4 III-V-group nitride crystals

[17a-B401-5] [INVITED] Development of novel neutron detector using BGaN semiconductor

〇Takayuki Nakano^1,2, Toru Aoki^1,2 (1.R.I.E. Shizuoka Univ., 2.Shizuoka Univ.)

Keywords:BGaN, neutron detector, Semiconductor detector

BGaN, a group-III nitride semiconductor, is a promising material as a neutron detection semiconductor material because B atoms have a large neutron capture cross sectional area. BGaN has been proposed and developed as a novel neutron detection material that can perform neutron capture and signal detection in a single layer, because B atoms, which are neutron capture elements, can be contained in the sensitive layer region. In this paper, the BGaN device development will be introduced.