The 70th JSAP Spring Meeting 2023

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[17a-B401-1~9] 15.4 III-V-group nitride crystals

Fri. Mar 17, 2023 9:00 AM - 11:45 AM B401 (Building No. 2)

Atsushi Kobayashi(Univ. of Tokyo), Yusuke Hayashi(Osaka Univ.)

10:45 AM - 11:00 AM

[17a-B401-6] Near-band-edge emissions of a monolayer hexagonal BN epitaxial film studied by using cathodoluminescence spectroscopy

Kohei Shima1, Tin Cheng2, Christopher Mellor2, Peter Beton2, Christine Elias3, Bernard Gil3, Guillaume Cassabois3, Sergei Novikov2, Shigefusa Chichibu1 (1.IMRAM-Tohoku Univ., 2.Univ. Nottingham, 3.CNRS Univ. Montpellier)

Keywords:boron nitride, Cathodoluminescence

For the accurate understanding of a luminescence spectrum of monolayer hexagonal BN (mBN), complementary use of a cathodoluminescence (CL) technique is advantageous because an electron beam has no limitations on the excitable bandgap energies and CL spectra is free from resonant Raman scattering signals potentially involved in photoluminescence experiments. Although CL spectra of hexagonal BN flakes composed of 100 down to 6 layers prepared by mechanical exfoliation have been shown, CL spectrum of mBN has not been reported yet. Here we present CL spectra of mBN epilayers prepared by bottom-up process using molecular beam epitaxy.