[17a-B414-1~7] 17.3 Layered materials

△ [17a-B414-4] The p-type operation of WSe₂ FET with Bi/Au contact by reducing Bi thickness with surface segregation

〇Ryuichi Nakajima¹, Tomonori Nishimura¹, Keiji Ueno², Kosuke Nagashio¹ (1.The Univ. of Tokyo, 2.Saitama Univ.)

Keywords:TMDC, FLP, Surface segregation

Surface segregation of Bi/Au bilayer system was applied to the operation of WSe₂ Schottky FET. Thick Bi film suppressed thermal damage during Au deposition, and after deposition annealing was applied to reduce the thickness of Bi film with surface segregation. With such process, the property of FET was changed from strong n-type to ambipolar.