[17a-D209-1~8] 11.1 Fundamental properties

[17a-D209-1] Thickness control in FeSe/STO with interface superconductivity by utilizing electric double-layer transistor

〇(M2)Hiroki Ogawa¹, Tomoki Kobayashi¹, Hiroki Nakagawa¹, Fuyuki Nabeshima¹, Atsutaka Maeda¹ (1.Univ. of Tokyo)

Keywords:Iron-based superconductor, thin film

The discovery of superconductivity in monolayer FeSe thin film has generated great interest. The superconducting gap closing temperature was reported to be over 65 K, which is enhanced by interfacial effects. We report the successful growth of thin films on atomically flat and thermally stable TiO2-terminated STO substrate which exhibits interface superconductivity, using pulsed laser deposition PLD. However, for thickness < 3nm, zero resistivity is not obtained. In this work, we try to obtain the temperature dependence of the resistivity of ultra-thin films by using the EDLT developed by Shiogai et al., while maintaining the interface effect and electron doping.