[17a-D704-1~9] 10.3 Spin devices, magnetic memories and storages

[17a-D704-6] [The 23rd Outstanding Achievement Award Speech] Pioneering Research on MgO-based Magnetic Tunnel Junctions

〇Shinji Yuasa^1,2 (1.AIST, 2.Univ. Tsukuba)

Keywords:spintronics, magnetic tunnel junction, MRAM

Magnetic tunnel junction (MTJ) based on crystalline MgO tunnel barrier is the current core technology for spintronic device applications. Especially, the CoFeB/MgO/CoFeB - MTJ is compatible with mass-manufacturing processes and has been commercialized as high-performance read head for ultrahigh-density HDD, non-volatile memory STT-MRAM, and general-purpose magnetic sensors. In the presentation, I am going to overview my research activities for the past 20 years and discuss prospects for future spintronic applications.