[17a-PB01-1~25] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[17a-PB01-13] Influence of N₂ concentration in sputtering deposition of SnO_x thin-film under Ar/N₂ mixed gas

〇(M1)Takuma Kawaguchi¹, Kotaro Watanabe¹, Hiroki Nagai¹, Tomohiro Yamaguchi¹, Takeyoshi Onuma¹, Tohru Honda¹, Shinya Aikawa¹ (1.Kogakuin Univ.)

Keywords:oxide semiconductor, nitrogen doping, nitrogen sputtering