[17a-PB01-1~25] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[17a-PB01-15] Characterization of SnO₂ thin films fabricated by sputtering under Ar/H₂ atmosphere

〇Tubasa Kobayasi¹, Kotaro Watanabe¹, Takuma Kawaguchi¹, Tetsuya Ishida¹, Shinya Aikawa¹ (1.Kogakuin Univ)

Keywords:reducing conditions, sputtering, SnO2 thin films