[17a-PB01-1~25] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[17a-PB01-19] Fabrication and characterization of Ca-doped In₂O₃ TFTs using CaO and CaF₂ as co-sputtering material

〇(M1)Ayumu Nodera¹, Shun Mori¹, Shinya Aikawa¹ (1.Kogakuin Univ.)

Keywords:TFT, indium oxide, co-sputtering