[17a-PB01-1~25] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[17a-PB01-22] Threshold Voltage Control of Oxide-TFTs by Ion Implantation

〇Toshihiko Sakai¹, Masaki Fujiwara¹, Daisuke Azuma¹, Yasunori Andoh¹, Daisuke Matsuo², Toshimasa Ui², Keisuke Yasuta², Yuya Yamane², Jun-ichi Tatemichi² (1.Nissin Electric, 2.Nissin Ion Equipment)

Keywords:oxide-TFT, threshold voltage, ion implantation

It is known that the threshold voltage of oxide-TFTs tends to shift to the negative side as the mobility becomes higher. In this study, we confirmed that the threshold voltage of oxide-TFTs can be controlled by ion implantation into the gate dielectric films, applying the fixed charge control by ion implantation into the underlying SiO₂ films through thin metal films.