[17a-PB01-1~25] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[17a-PB01-4] Growth of Ga₂O₃ thin film by sputtering method using powder target

〇Atsuya Oikawa¹, Miki Fujita¹, Daiki Nagatsuyu², Rintaro Matsumoto², Toshiki Makimoto² (1.NIT, Ichinoseki College, 2.Waseda Univ.)

Keywords:gallium oxide, sputtering method, powder target

Ga₂O₃ thin films were prepared by sputtering method using a powder target and evaluated. Although the film was grown on a quartz glass substrate, crystal orientation to β-Ga₂O₃ was confirmed, suggesting that the powder sputtering method is useful. Crystal orientation was also confirmed when the conditions of press pressure and powder holder shape were changed, but the growth rate was different.