[17a-PB01-1~25] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[17a-PB01-5] Study on Fabrication and Evaluation of GaN thin films by RF Magnetron Sputtering

Shota Kuwahara¹, Yuuki Sato¹, Tadashi Ohachi¹, 〇Shinzo Yoshikado¹ (1.Doshisha Univ.)

Keywords:wide bandgap compound semiconductor, Thin films, RF magnetron sputtering

In the present study, the thin films of the gallium nitride (GaN), which is a direct-transition type wideband gap semi-conductor, have been deposited by an RF magnetron sputtering of which deposition speed is comparatively fast and can deposit films on large area substrate. However, the film quality was not good and when Si was doped into a target, the decrease in a resistivity was not observed and as a result controlling of conduction type was difficult. So, by the present study, we carry out the deposition of films using single crystal both a target doped Si and a substrate of GaN using RF magnetron sputtering, and discuss about the improvement of film crystallinity.