Oral presentation

[15a-E102-1~10] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Wed. Mar 15, 2023 9:15 AM - 12:00 PM E102 (Building No. 12)

Mutsumi Sugiyama(Tokyo Univ. of Sci.), Tomoki Abe(Tottori Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:15 AM - 9:30 AM

[15a-E102-1] Electrostatic spray deposition of NiO thin films for hole-transporting-layers

〇Keito Okubo¹, Keisuke Tomono¹, Takuma Shoji¹, Mutsumi Sugiyama^1,2 (1.Tokyo Univ. Sci., 2.RIST)

9:30 AM - 9:45 AM

[15a-E102-2] Crystal Growth of Continuous Composition Gradient RS-MgZnO Thin Films

〇Tomoki Otsuka¹, Eiji Kikuchi^2,3, Taisei Hattori¹, Tsutomu Araki¹, Kentaro Kaneko² (1.Col. of Sci. & Eng., Ritsumeikan Univ., 2.Res. Org. Sci. & Tech., Ritsumeikan Univ., 3.Grad. Sch of Eng., Kyoto Univ.)

9:45 AM - 10:00 AM

[15a-E102-3] Effect of Zn supply on sputtering induced crystalline defects in ZnO films

〇Yasuji Yamada¹, Toya Shirasu², Shuhei Funaki¹ (1.Shimane Univ. Soriko, 2.Shimane Univ. Shizen)

10:00 AM - 10:15 AM

[15a-E102-4] Effect of Water Vapor Addition on Low Resistivity of Transparent Conductive ZnO Films Prepered by Atmospheric Pressure Low Temperature Plasma

〇Nobuyoshi Hosotani¹, Masashi Yamamoto¹, Yoshifumi Suzaki², Tomokazu Shikama¹ (1.Kagawa Kosen., 2.Kagawa Univ.)

10:15 AM - 10:30 AM

[15a-E102-5] Photocurrent Spectra of Rocksalt-structured MgZnO Films in Vacuum UV Spectral Range (II)

〇Hiroya Kusaka¹, Wataru Kosaka¹, Kotaro Ogawa^1,2, Kentaro Kaneko³, Tomohiro Yamaguchi¹, Toru Honda¹, Shizuo Fujita⁴, Takeyoshi Onuma¹ (1.Kogakuin Univ., 2.ORC Manufacturing, 3.Ritsumeikan Univ., 4.Kyoto Univ.)

10:45 AM - 11:00 AM

[15a-E102-6] Effects of Postannealing on the Properties of Transparent Conductive
W-Doped In₂O₃ Films/glass substrates

〇(PC)Rajasekaran Palani¹, Yugo Okada², Makoto Maehara², Hisashi Kitami^1,2, Shintaro Kobayashi³, Katsuhiko Inaba³, Hisao Makino¹, Kimio Kinoshita², Tetsuya Yamamoto¹ (1.Kochi Univ. Tech., Res. Inst., 2.Sumitomo Heavy Industries, Ltd., 3.Rigaku Corp.)

11:00 AM - 11:15 AM

△ [15a-E102-7] Effects of annealing treatment on electrical properties of ZnO thin films by AD method

〇Yumeng Zheng¹, Shyoki Toriyama¹, Yuuki Sato¹, Shinzo Yoshikado¹ (1.Doshisha Univ.)

11:15 AM - 11:30 AM

△ [15a-E102-8] Growth of Group III Impurities Doped Rocksalt-structured MgZnO Films by Mist CVD

〇Masaki Matsuda¹, Kotaro Ogawa², Yuichi Ota³, Tomohiro Yamaguchi¹, Kentaro Kaneko⁴, Shizuo Fujita⁵, Tohru Honda¹, Takeyoshi Onuma¹ (1.Kogakuin Univ., 2.ORC Manu., 3.TIRI, 4.Ritsumeikan Univ., 5.Kyoto Univ.)

11:30 AM - 11:45 AM

△ [15a-E102-9] Reactive ion etching-induced damages of ZnO single crystals studied by using time-resolved photoluminescence and x-ray photoelectron spectroscopy methods

〇Takumi Kasuya¹, Kohei Shima¹, Shigefusa Chichibu¹ (1.IMRAM-Tohoku Univ.)

11:45 AM - 12:00 PM

▼ [15a-E102-10] Mechanism of Nitrogen Doping of Zinc Oxide Nanoparticles by Arc Plasma and Study of Their p-type Characteristics

〇(D)RAJ DEEP¹, Takuma Akazawa¹, Toshiyuki Yoshida¹, Yasuhisa Fujita¹ (1.Shimane University)

Oral presentation

[15p-E102-1~17] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Wed. Mar 15, 2023 1:30 PM - 6:15 PM E102 (Building No. 12)

Mamoru Furuta(Kochi Univ. of Tech.), Keisuke Ide(Tokyo Tech), Ken Goto(Tokyo Univ. Agri. and Tech.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 1:45 PM

[15p-E102-1] [The 53rd Young Scientist Presentation Award Speech] Ternary amorphous oxide semiconductor material toward 3D-integrated ferroelectric

〇Takanori Takahashi¹, Mutsunori Uenuma¹, Masaharu Kobayashi², Yukiharu Uraoka¹ (1.NAIST, 2.Univ. of Tokyo)

1:45 PM - 2:00 PM

▲ [15p-E102-2] [The 7th Thin Film and Surface Physics Division Young Researcher Award Speech] Heterogeneous metal oxide channel structure for ultra-high sensitivity phototransistor with modulated operating conditions

〇KuanJu Zhou¹, Keisuke Ide², Takayoshi Katase², Toshio Kamiya^2,3, TingChang Chang¹ (1.National Sun Yat-Sen Univ, 2.MSL Tokyo Tech, 3.MDX Tokyo Tech)

2:00 PM - 2:15 PM

[15p-E102-3] Bulk single crystal growth and its transport properties of In₂O₃(ZnO)₃

〇Yuto Uruma¹, Tadahito Inoue¹, Naoki Kase¹, Nobuaki Miyakawa¹ (1.Tokyo Univ. of Sci.)

2:15 PM - 2:30 PM

[15p-E102-4] Fabrication of High-Mobility In₂O₃ Thin Films by PLD under High-Base Pressure

〇Yusaku Magari¹, Prashant Ghediya¹, Hui Yang^1,2, Yuqiao Zhang³, Yasutaka Matsuo¹, Hiromichi Ohta¹ (1.RIES-Hokkaido Univ., 2.Beijing Jiaotong Univ., 3.Jiangsu Univ.)

2:30 PM - 2:45 PM

▲ [15p-E102-5] Thin Film Transistors with High-Mobility In₂O₃ Thin Films that Fabricated under High-Base Pressure as Active Layers

〇Prashant Ghediya¹, Yusaku Magari¹, Hui Yang^1,2, Yuqiao Zhang³, Yasutaka Matsuo¹, Hiromichi Ohta¹ (1.RIES-Hokkaido Univ., 2.Beijing Jiaotong Univ., 3.Jiangsu Univ.)

2:45 PM - 3:00 PM

▲ [15p-E102-6] Metal–semiconductor transition of hydrogen-doped In₂O₃ via solid-phase crystallization.

〇XIAOQIAN WANG¹, Mamoru Furuta¹ (1.Kochi Univ. of Tech.)

3:00 PM - 3:15 PM

[15p-E102-7] In₅GaZnO₁₀ thin-film transistors fabricated by sputtering deposition

〇Toshiki Nakanowatari¹, Yuta Watanabe¹, Yoshiaki Hattori¹, Masatoshi Kitamura¹ (1.Kobe Univ.)

3:30 PM - 3:45 PM

▼ [15p-E102-8] Ferroelectric HfO₂-ZrO₂ Gated Transparent InSnZnO_x Thin Film Memories

〇(D)Hui Yang^1,2, Prashant Ghediya¹, Yuqiao Zhang³, Yasutaka Matsuo¹, Yusaku Magari¹, Hiromichi Ohta¹ (1.RIES-Hokkaido Univ., 2.Beijing Jiaotong Univ., 3.Jiangsu Univ.)

3:45 PM - 4:00 PM

△ [15p-E102-9] Investigation of amorphous-InGaZnO sheet resistance reduction technique using a hot ion-implantation method

〇Yuya Yamane¹, Keisuke Yasuta¹, Toshimasa Ui¹, Junichi Tatemichi¹ (1.Nissin Ion Equipment)

4:00 PM - 4:15 PM

△ [15p-E102-10] Effect of annealing temperature and composition ratio on electrical characteristics of In-Ga-O thin-film transistor

〇Hikaru Hoshikawa¹, Takanori Takahashi¹, Mutsunori Uenuma¹, Yukiharu Uraoka¹ (1.NAIST)

4:15 PM - 4:30 PM

△ [15p-E102-11] Evaluation of band alinement of rutile-Sn_1-xGe_xO₂ by XPS

〇Yo Nagashima¹, Akira Chikamatsu², Yasushi Hirose³ (1.Univ. of Tokyo, 2.Ochanomizu Univ., 3.Tokyo Metropolitan Univ.)

4:30 PM - 4:45 PM

△ [15p-E102-12] 【Highlighted Presentation】Selective-area-growth of rutile-type SnO₂ on TiO₂ (110) substrate

〇(D)Hitoshi Takane¹, Takayoshi Oshima², Katsuhisa Tanaka¹, Kentaro Kaneko³ (1.Kyoto Univ., 2.NIMS, 3.Ritsumeikan Univ.)

5:00 PM - 5:15 PM

▼ [15p-E102-13] The R[O₂]% Ratio Effect on the Optical Properties of Ag_xO Thin Films Grown by RFM-Sputtering

〇(DC)Xiaojiao Liu¹, Tatsuya Yasuoka¹, Li Liu², Toshiyuki Kawaharamura^1,2 (1.Kochi Univ. of Tech., 2.Res. Inst.)

5:15 PM - 5:30 PM

△ [15p-E102-14] Hetero Epitaxial Growth of α-Ga₂O₃/rh-ITO Structure and Demonstration of Its Deep Ultraviolet Photodetector

〇(DC)Kazuki Shimazoe¹, Hiroyuki Nishinaka¹, Takahiro Kato¹, Yoko Taniguchi¹, Kazutaka Kanegae¹, Masahiro Yoshimoto¹ (1.Kyoto Inst. Tech.)

5:30 PM - 5:45 PM

▼ [15p-E102-15] Killer Defects Responsible for Leakage Current in HVPE (001) β-Ga2O3 SBD Observed by Emission Microscopy and Synchrotron X-ray Topography

〇(D)Sayleap Sdoeung¹, Kohei Sasaki², Akito Kuramata², Makoto Kasu¹ (1.Saga Univ., 2.Novel Crystal Technology)

5:45 PM - 6:00 PM

△ [15p-E102-16] Identification of Killer Defects of (011) HVPE-grown β-Ga₂O₃ Schottky Barrier Diodes by High-Sensitive Emission Microscope and X-ray Topography

〇(B)Yuto Otsubo¹, Sayleap Sdoeung¹, Kohei Sasaki², Akito Kuramata², Makoto Kasu¹ (1.Saga Univ., 2.Novel Crystal Technology, Inc.)

6:00 PM - 6:15 PM

[15p-E102-17] [The 44th Young Scientist Award Speech] Thermal Stability of α-(Al_xGa_1-x)₂O₃ films on Sapphire Substrates

〇Riena Jinno¹, Kentaro Kaneko¹, Shizuo Fujita¹ (1.Kyoto Univ.)

Oral presentation

[16a-E102-1~6] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Thu. Mar 16, 2023 10:30 AM - 12:00 PM E102 (Building No. 12)

Masataka Higashiwaki(NICT)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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10:30 AM - 10:45 AM

[16a-E102-1] Homoepitaxial growth of (001) β-Ga₂O₃ thin films by mist CVD

〇Ryo Ueda¹, Hiroyuki Nishinaka¹, Tatsuji Nagaoka², Hiroki Miyake², Masahiro Yoshimoto¹ (1.Kyoto Inst. Tech., 2.MIRISE Technologies Corp.)

10:45 AM - 11:00 AM

[16a-E102-2] High-speed Growth of P-type α-(Ir,Ga)₂O₃ Thin Films Using Bromine Compounds

〇(M2)Eiji Kikuchi^1,2, Taisei Hattori³, Tomoki Otsuka³, Kentaro Kaneko² (1.Grad. Sch. Of Eng., Kyoto Univ., 2.Res. Org. Sci. & Tech., Ritsumeikan Univ., 3.Col. Of Sci. & Eng., Ritsumeikan Univ.)

11:00 AM - 11:15 AM

[16a-E102-3] State of mist droplets in the reactor of mist CVD

〇Keita Kusaka¹, Ryousuke Kaji¹, Toshiyuki Kawaharamura^1,2 (1.Kochi Univ. of Tech., 2.Res. Inst.)

11:15 AM - 11:30 AM

▲ [16a-E102-4] Depth profile of Nb in anatase Ti_1−xNb_xO₂ thin films grown by mist chemical vapor deposition method

〇(D)Han XU¹, Tomohito Sudare^1,4, Yumie Miura^1,4, Ryo Nakayama^1,4, Ryota Shimizu¹, Naoomi Yamada², Kentaro Kaneko³, Taro Hitosugi^1,4 (1.Tokyo Tech., 2.Chubu Univ., 3.Ritsumeikan Univ., 4.Univ. Tokyo)

11:30 AM - 11:45 AM

[16a-E102-5] Investigation on Growth Mechanism in α-In₂O₃ by Mist CVD Using Various In-based Powders as Raw Material

〇Takumi Yamamoto¹, Akito Taguchi¹, Rie Yamada¹, Hiroki Nagai¹, Atsushi Sekiguchi¹, Takeyoshi Onuma¹, Tohru Honda¹, Tomohiro Yamaguchi¹ (1.Kogakuin Univ.)

11:45 AM - 12:00 PM

[16a-E102-6] Reduction of carrier concentration in α-In₂O₃ films grown by Mist CVD and fabrication of MOSFET

〇Akito Taguchi¹, Shinri Yamadera¹, Takumi Yamamoto¹, Yuya Hayashi¹, Mamoru Murayama¹, Kotaro Ogawa¹, Tohru Honda¹, Takeyoshi Onuma¹, Kentaro Kaneko², Shinya Aikawa¹, Shizuo Fujita³, Tomohiro Yamaguchi¹ (1.Kogakuin Univ., 2.Ritsumeikan Univ., 3.Kyoto Univ.)

Oral presentation

[16p-E102-1~12] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Thu. Mar 16, 2023 1:30 PM - 4:45 PM E102 (Building No. 12)

Takayoshi Oshima(NIMS), Kentaro Kaneko(Ritsumeikan Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 1:45 PM

[16p-E102-1] Growth temperature dependence of Ga₂O₃ growth on ScAlMgO₄ by mist CVD

〇Soma Kato¹, Syuhei Yamashita¹, Yuichi Wada¹, Hitoshi Takane³, Yuto Yamafuji¹, Junjiro Kikawa¹, Makoto Matsukura⁴, Takahiro Kojima⁴, Takashi Shinohe⁵, Momoko Deura², Kentaro Kaneko³, Tsutomu Araki¹ (1.Ritsumeikan Univ., 2.R-GIRO, 3.ROST, 4.OXIDE Co., 5.FLOSFIA Inc.)

1:45 PM - 2:00 PM

[16p-E102-2] TEM characterization of defects in κ-(In_xGa_1-x)₂O₃ thin film grown on (001) FZ-grown ε-GaFeO₃ substrate by mist CVD

〇Osamu Ueda¹, Hiroyuki Nishinaka², Noriaki Ikenaga³, Noriyuki Hasuike², Masahiro Yoshimoto² (1.Meiji Univ., 2.Kyoto Inst. Tech., 3.Kanazawa Inst. Tech.)

2:00 PM - 2:15 PM

[16p-E102-3] Electronic structure and dielectric constant in gallium oxide by quasi-particle self-consistent GW method

〇Kazuki Muranaka¹, Ko Hyodo¹, Chandro Pardede¹, Masao Obata¹, Tatsuki Oda¹ (1.Kanazawa Univ.)

2:15 PM - 2:30 PM

[16p-E102-4] Evaluation of line shaped voids in β-Ga₂O₃ grown by the vertical Bridgman method

〇(M1)Naoto Kobayashi¹, Keigo Hoshikawa¹, Toshinori Taishi¹ (1.Shinshu Univ.)

2:30 PM - 2:45 PM

[16p-E102-5] Reduction of dislocation density in α-Ga₂O₃ epilayers by maskless method

〇Yuichi Oshima¹, Hiroyuki Ando², Takashi Shinohe² (1.NIMS, 2.FLOSFIA)

2:45 PM - 3:00 PM

[16p-E102-6] Thermal Stability of Selective-Area-Growth-α-Ga₂O₃ on Sapphire Substrates
Investigated by Micro-Raman Spectroscopy

〇Riena Jinno¹, Masami Kanzaki², Susumu Fukatsu¹ (1.Univ. Tokyo, 2.Okayama Univ.)

3:00 PM - 3:15 PM

[16p-E102-7] Band Structure Analysis of α-Ga₂O₃/Al₂O₃ Superlattices

〇Takahiro Kawamura¹, Toru Akiyama¹ (1.Mie Univ.)

3:30 PM - 3:45 PM

▲ [16p-E102-8] Transient Photocapacitance Spectroscopy of Deep-levels in (001) β-Ga₂O₃

〇(DC)Fenfen Fenda Florena¹, Aboulaye Traore¹, Takeaki Sakurai¹ (1.Univ. of Tsukuba)

3:45 PM - 4:00 PM

[16p-E102-9] Time-resolved photoluminescence spectroscopy for β-Ga₂O₃ via multiphoton excitation

Tomoka Nishikawa¹, 〇Tomoyuki Tanikawa¹, Hiroto Honda¹, Ken Goto², Hisashi Murakami², Yoshinao KumagaiKumagai², Atsushi Tanaka³, Yoshio Honda³, Hiroshi Amano³, Masahiro Uemukai¹, Ryuji Katayama¹ (1.Osaka Univ., 2.TUAT, 3.IMaSS, Nagoya Univ.)

4:00 PM - 4:15 PM

[16p-E102-10] Anisotropic HCl gas etching of (001) β-Ga₂O₃ substrate

〇Takayoshi Oshima¹, Yuichi Oshima¹ (1.NIMS)

4:15 PM - 4:30 PM

▲ [16p-E102-11] Improvement in Electrical Properties of Ga₂O₃ Schottky Barrier Diodes by Nitrogen Radical Treatment

〇Zhenwei Wang¹, Takahiro Kitada^1,2, Sandeep Kumar¹, Masataka Higashiwaki^1,2 (1.NICT, 2.OMU)

4:30 PM - 4:45 PM

[16p-E102-12] NiO Thin Film Formed on Heated β-Ga₂O₃ Substrate by Electron Beam Evaporation

〇Shinji Nakagomi¹, Takashi Yasuda¹ (1.Ishinomaki Senshu)

Poster presentation

[17a-PB01-1~25] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Fri. Mar 17, 2023 9:30 AM - 11:30 AM PB01 (Poster)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:30 AM - 11:30 AM

[17a-PB01-1] Growth of single-crystalline ZnO layer by sputter epitaxy method (VI)

〇Hyuga Kimura¹, Ryota Misawa¹, Keisuke Yoshida¹, Hiroyuki Shinoda¹, Nobuki Mutsukura¹ (1.Tokyo Denki Univ.)

9:30 AM - 11:30 AM

[17a-PB01-2] Study on Deposition and Evaluation of Gallium Oxide Thin Films by RF Magnetron Sputtering

〇(M1)Shunsuke Takahashi¹, Shota Kuwahara¹, Yuuki Sato¹, Shinzo Yoshikado¹ (1.Doshisha University)

9:30 AM - 11:30 AM

[17a-PB01-3] Crystalline orientation variation of Cu₂O films deposited on quartz glass substrates

Akari Yoshida², Shuhei Funaki¹, 〇Yasuji Yamada¹ (1.Shimane Univ. Soriko, 2.Shimane Univ. Shizen)

9:30 AM - 11:30 AM

[17a-PB01-4] Growth of Ga₂O₃ thin film by sputtering method using powder target

〇Atsuya Oikawa¹, Miki Fujita¹, Daiki Nagatsuyu², Rintaro Matsumoto², Toshiki Makimoto² (1.NIT, Ichinoseki College, 2.Waseda Univ.)

9:30 AM - 11:30 AM

[17a-PB01-5] Study on Fabrication and Evaluation of GaN thin films by RF Magnetron Sputtering

Shota Kuwahara¹, Yuuki Sato¹, Tadashi Ohachi¹, 〇Shinzo Yoshikado¹ (1.Doshisha Univ.)

9:30 AM - 11:30 AM

[17a-PB01-6] Sol-gel deposition of low-resistivity Al-doped ZnO thin films

〇Koji Abe¹, Tasuku Kubota¹ (1.Nagoya Inst.Tech.)

9:30 AM - 11:30 AM

[17a-PB01-7] Formation and growth of Ni particle on β-Ga₂O₃(-201) surface: UHV observation

〇(M1)Ririko Takemoto¹, Arihumi Okada¹, Kohei Kadono¹ (1.Kyoto Inst. Tech.)

9:30 AM - 11:30 AM

[17a-PB01-8] Growth of zinc oxide thin films on a-sapphire substrates by mist chemical vapor deposition using acetylacetonated Zn source solutions

〇Kazuyuki Uno¹, Megumi Nishioka¹ (1.Systems Engineering, Wakayama University)

9:30 AM - 11:30 AM

[17a-PB01-9] Comparison of reduction states in SnOx thin films by N2 and Ar/H2 annealing

〇Kotaro Watanabe¹, Takuma Kawaguchi¹, Tomohiro Yamaguchi¹, Takeyoshi Onuma¹, Tohru Honda¹, Shinya Aikawa¹ (1.Kogakuin Univ.)

9:30 AM - 11:30 AM

[17a-PB01-10] Preparation and evaluation of thin films using hydrothermally synthesized ZnGa₂O₄ nanoparticles

〇(B)Kazutoshi Fukasaku¹, Kouhei Aiba¹, Yasuharu Ohgoe¹, Michiyuki Yoshida², Takayuki Nakane³, Takashi Naka³, Satoshi Ishii¹ (1.Tokyo Denki Univ., 2.Gifu Univ., 3.NIMS)

9:30 AM - 11:30 AM

[17a-PB01-11] Temperature dependence of Raman spectra in β-Ga₂O₃ single crystal

〇Wataru Furumoto¹, Issei Maeda¹, Sou Isaji¹, Noriyuki Hasuike¹, Toshiyuki Issiki¹, Kenji Kobayashi² (1.Kyoto Inst. Tech., 2.Hitachi High-Tech)

9:30 AM - 11:30 AM

[17a-PB01-12] Synthesis of AlO_x, TiO₂ alloy films and multilayer films by mist CVD method

〇Kojun Yokoyama¹, Wenbo Fan¹, Hajime Shirai¹ (1.Saitama Univ.)

9:30 AM - 11:30 AM

[17a-PB01-13] Influence of N₂ concentration in sputtering deposition of SnO_x thin-film under Ar/N₂ mixed gas

〇(M1)Takuma Kawaguchi¹, Kotaro Watanabe¹, Hiroki Nagai¹, Tomohiro Yamaguchi¹, Takeyoshi Onuma¹, Tohru Honda¹, Shinya Aikawa¹ (1.Kogakuin Univ.)

9:30 AM - 11:30 AM

[17a-PB01-14] Effect of precursor pH on luminescence properties of sol-gel synthesized ZnGa₂O₄ films

〇(B)Kouhei Aiba¹, Kazutoshi Fukasaku¹, Yasuharu Ohgoe¹, Takayuki Nakane², Takashi Naka², Satoshi Ishii¹ (1.Tokyo Denki Univ., 2.NIMS)

9:30 AM - 11:30 AM

[17a-PB01-15] Characterization of SnO₂ thin films fabricated by sputtering under Ar/H₂ atmosphere

〇Tubasa Kobayasi¹, Kotaro Watanabe¹, Takuma Kawaguchi¹, Tetsuya Ishida¹, Shinya Aikawa¹ (1.Kogakuin Univ)

9:30 AM - 11:30 AM

[17a-PB01-16] Fabrication and characterization of SnS thin-films by sulfur vapor transport annealing

〇Daiki Watanabe¹, Kotaro Watanabe¹, Takuma Kawaguchi¹, Shinya Aikawa¹ (1.Kogakuin Univ.)

9:30 AM - 11:30 AM

[17a-PB01-17] Fabrication and characterization of GZO transparent conductive films by using roll-to-roll plasma-assisted molecular beam deposition

〇Ritsuki Mizuno¹, Sugiyama Hiroki¹, Muranaka Tsutomu¹, Nabetani Yoichi¹, Matsumoto Takashi¹ (1.Yamanashi Univ.)

9:30 AM - 11:30 AM

[17a-PB01-18] Fabrication of ITO thin films for fuel cell separator

〇(B)Taisei Hattori¹, Takashi Tanaka², Eiji Kikuchi^3,4, Tomoki Otsuka¹, Tsutomu Araki¹, Kentaro Kaneko³ (1.Col. of Sci. & Eng. Ritsumeikan Univ., 2.EYETEC Co., 3.Res. Org. Sci. & Tech, 4.Kyoto Univ.)

9:30 AM - 11:30 AM

[17a-PB01-19] Fabrication and characterization of Ca-doped In₂O₃ TFTs using CaO and CaF₂ as co-sputtering material

〇(M1)Ayumu Nodera¹, Shun Mori¹, Shinya Aikawa¹ (1.Kogakuin Univ.)

9:30 AM - 11:30 AM

[17a-PB01-20] B doping toward for realization of In₂O₃-based TFT without thermal treatment

〇Shinri Yamadera¹, Kanta Kibishi¹, Ayumu Nodera¹, Yuki Kumamoto¹, Shun Mori¹, Shinya Aikawa¹ (1.Kogakuin Univ.)

9:30 AM - 11:30 AM

[17a-PB01-21] Environment-dependent electrical properties of La-doped In₂O₃ thin-film transistors

〇Ryota Kobayashi¹, Ayumu Nodera¹, Shinya Aikawa¹ (1.Kogakuin Univ.)

9:30 AM - 11:30 AM

[17a-PB01-22] Threshold Voltage Control of Oxide-TFTs by Ion Implantation

〇Toshihiko Sakai¹, Masaki Fujiwara¹, Daisuke Azuma¹, Yasunori Andoh¹, Daisuke Matsuo², Toshimasa Ui², Keisuke Yasuta², Yuya Yamane², Jun-ichi Tatemichi² (1.Nissin Electric, 2.Nissin Ion Equipment)

9:30 AM - 11:30 AM

[17a-PB01-23] Hystereses on Voltage-Current Characteristics of PEDOT:PSS/ZnO Nanorods/GZO Heterojunction Devices ~ Cycle Number Dependence ~

〇Tomoaki Terasako¹, Masakazu Yagi², Tetsuya Yamamoto³ (1.Grad. School Sci. & Eng., Ehime Univ., 2.Natl. Inst. Technol., Kagawa Col., 3.Res. Inst., Kochi Univ. of Technol.)

9:30 AM - 11:30 AM

[17a-PB01-24] Basic characteristics of MSM photodetector using α-Ga₂O₃ on a-sapphire substrates by mist chemical vapor deposition

〇Keishi Yamaoka¹, Kazuyuki Uno¹ (1.Systems Engineering Wakayama University)

9:30 AM - 11:30 AM

[17a-PB01-25] Anisotropic HCl gas etching of (010) β-Ga₂O₃ substrate

〇Takayoshi Oshima¹, Yuichi Oshima¹ (1.NIMS)

Sessions

21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[15a-E102-1~10] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

△ [15a-E102-7] Effects of annealing treatment on electrical properties of ZnO thin films by AD method

△ [15a-E102-8] Growth of Group III Impurities Doped Rocksalt-structured MgZnO Films by Mist CVD

△ [15a-E102-9] Reactive ion etching-induced damages of ZnO single crystals studied by using time-resolved photoluminescence and x-ray photoelectron spectroscopy methods

▼ [15a-E102-10] Mechanism of Nitrogen Doping of Zinc Oxide Nanoparticles by Arc Plasma and Study of Their p-type Characteristics

[15p-E102-1~17] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

▲ [15p-E102-2] [The 7th Thin Film and Surface Physics Division Young Researcher Award Speech] Heterogeneous metal oxide channel structure for ultra-high sensitivity phototransistor with modulated operating conditions

▲ [15p-E102-5] Thin Film Transistors with High-Mobility In2O3 Thin Films that Fabricated under High-Base Pressure as Active Layers

▲ [15p-E102-6] Metal–semiconductor transition of hydrogen-doped In2O3 via solid-phase crystallization.

▼ [15p-E102-8] Ferroelectric HfO2-ZrO2 Gated Transparent InSnZnOx Thin Film Memories

△ [15p-E102-9] Investigation of amorphous-InGaZnO sheet resistance reduction technique using a hot ion-implantation method

△ [15p-E102-10] Effect of annealing temperature and composition ratio on electrical characteristics of In-Ga-O thin-film transistor

△ [15p-E102-11] Evaluation of band alinement of rutile-Sn1-xGexO2 by XPS

△ [15p-E102-12] 【Highlighted Presentation】Selective-area-growth of rutile-type SnO2 on TiO2 (110) substrate

▼ [15p-E102-13] The R[O2]% Ratio Effect on the Optical Properties of AgxO Thin Films Grown by RFM-Sputtering

△ [15p-E102-14] Hetero Epitaxial Growth of α-Ga2O3/rh-ITO Structure and Demonstration of Its Deep Ultraviolet Photodetector

▼ [15p-E102-15] Killer Defects Responsible for Leakage Current in HVPE (001) β-Ga2O3 SBD Observed by Emission Microscopy and Synchrotron X-ray Topography

△ [15p-E102-16] Identification of Killer Defects of (011) HVPE-grown β-Ga2O3 Schottky Barrier Diodes by High-Sensitive Emission Microscope and X-ray Topography

[16a-E102-1~6] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

▲ [16a-E102-4] Depth profile of Nb in anatase Ti1−xNbxO2 thin films grown by mist chemical vapor deposition method

[16p-E102-1~12] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

▲ [16p-E102-8] Transient Photocapacitance Spectroscopy of Deep-levels in (001) β-Ga2O3

▲ [16p-E102-11] Improvement in Electrical Properties of Ga2O3 Schottky Barrier Diodes by Nitrogen Radical Treatment

[17a-PB01-1~25] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Authenticate

▲ [15p-E102-5] Thin Film Transistors with High-Mobility In₂O₃ Thin Films that Fabricated under High-Base Pressure as Active Layers

▲ [15p-E102-6] Metal–semiconductor transition of hydrogen-doped In₂O₃ via solid-phase crystallization.

▼ [15p-E102-8] Ferroelectric HfO₂-ZrO₂ Gated Transparent InSnZnO_x Thin Film Memories

△ [15p-E102-11] Evaluation of band alinement of rutile-Sn_1-xGe_xO₂ by XPS

△ [15p-E102-12] 【Highlighted Presentation】Selective-area-growth of rutile-type SnO₂ on TiO₂ (110) substrate

▼ [15p-E102-13] The R[O₂]% Ratio Effect on the Optical Properties of Ag_xO Thin Films Grown by RFM-Sputtering

△ [15p-E102-14] Hetero Epitaxial Growth of α-Ga₂O₃/rh-ITO Structure and Demonstration of Its Deep Ultraviolet Photodetector

△ [15p-E102-16] Identification of Killer Defects of (011) HVPE-grown β-Ga₂O₃ Schottky Barrier Diodes by High-Sensitive Emission Microscope and X-ray Topography

▲ [16a-E102-4] Depth profile of Nb in anatase Ti_1−xNb_xO₂ thin films grown by mist chemical vapor deposition method

▲ [16p-E102-8] Transient Photocapacitance Spectroscopy of Deep-levels in (001) β-Ga₂O₃

▲ [16p-E102-11] Improvement in Electrical Properties of Ga₂O₃ Schottky Barrier Diodes by Nitrogen Radical Treatment