[16p-E102-1~12] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[16p-E102-2] TEM characterization of defects in κ-(In_xGa_1-x)₂O₃ thin film grown on (001) FZ-grown ε-GaFeO₃ substrate by mist CVD

〇Osamu Ueda¹, Hiroyuki Nishinaka², Noriaki Ikenaga³, Noriyuki Hasuike², Masahiro Yoshimoto² (1.Meiji Univ., 2.Kyoto Inst. Tech., 3.Kanazawa Inst. Tech.)

Keywords:gallium oxide, mist CVD, defect

We have characterized defects in κ-(In_xGa_1-x)₂O₃ thin films grown on (001) FZ-grown ε-GaFeO₃ substrates by mist CVD using TEM. We found two types of defects: dislocation half-loops and microdefects. The half-loops are 7-50 nm in width and their Burgers vector was determined to be <010>. While the microdefects accompany strong strain field and are assumed to be planar defects such as dislocation loops lying on the (001) plane. From these results, generation mechanism for these defects are discussed.