Homoepitaxial growth of (001) β-Ga<sub>2</sub>O<sub>3</sub> thin films by mist CVD

Ryo Ueda; Hiroyuki Nishinaka; Tatsuji Nagaoka; Hiroki Miyake; Masahiro Yoshimoto

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Oral presentation

21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[16a-E102-1~6] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Thu. Mar 16, 2023 10:30 AM - 12:00 PM E102 (Building No. 12)

Masataka Higashiwaki(NICT)

10:30 AM - 10:45 AM

[16a-E102-1] Homoepitaxial growth of (001) β-Ga₂O₃ thin films by mist CVD

〇Ryo Ueda¹, Hiroyuki Nishinaka¹, Tatsuji Nagaoka², Hiroki Miyake², Masahiro Yoshimoto¹ (1.Kyoto Inst. Tech., 2.MIRISE Technologies Corp.)

Keywords:Ga2O3, epitaxial growth, thin film

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Presentation information

[16a-E102-1~6] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[16a-E102-1] Homoepitaxial growth of (001) β-Ga2O3 thin films by mist CVD

[16a-E102-1] Homoepitaxial growth of (001) β-Ga₂O₃ thin films by mist CVD