The 70th JSAP Spring Meeting 2023

Presentation information

Print

Oral presentation

21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[16p-E102-1~12] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Thu. Mar 16, 2023 1:30 PM - 4:45 PM E102 (Building No. 12)

Takayoshi Oshima(NIMS), Kentaro Kaneko(Ritsumeikan Univ.)

2:15 PM - 2:30 PM

[16p-E102-4] Evaluation of line shaped voids in β-Ga2O3 grown by the vertical Bridgman method

〇(M1)Naoto Kobayashi1, Keigo Hoshikawa1, Toshinori Taishi1 (1.Shinshu Univ.)

Keywords:gallium oxide, oxide, semiconductor

Line shaped voids existing in β-Ga2O3 grown by the EFG method have been reported to be one of the origins for leakage current of SBD. On the other hand, we have grown β-Ga2O3 single crystals by the vertical Bridgman method and observed the surface of the crystals, which revealed the existence of defects extending in the [010] direction. We observed multiple linear voids extending in the [010] direction during etching with phosphoric acid, but the etch pits were smaller than those observed in the EFG method at the same etching time, suggesting that the size of linear shaped voids in the VB method is smaller than EFG method.