The 70th JSAP Spring Meeting 2023

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21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[16p-E102-1~12] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Thu. Mar 16, 2023 1:30 PM - 4:45 PM E102 (Building No. 12)

Takayoshi Oshima(NIMS), Kentaro Kaneko(Ritsumeikan Univ.)

2:30 PM - 2:45 PM

[16p-E102-5] Reduction of dislocation density in α-Ga2O3 epilayers by maskless method

〇Yuichi Oshima1, Hiroyuki Ando2, Takashi Shinohe2 (1.NIMS, 2.FLOSFIA)

Keywords:Ga2O3, dislocations, maskless

We demonstrate a maskless method to reduce the dislocation density in α-Ga2O3 epilayers.