[15a-E102-1~10] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[15a-E102-4] Effect of Water Vapor Addition on Low Resistivity of Transparent Conductive ZnO Films Prepered by Atmospheric Pressure Low Temperature Plasma

〇Nobuyoshi Hosotani¹, Masashi Yamamoto¹, Yoshifumi Suzaki², Tomokazu Shikama¹ (1.Kagawa Kosen., 2.Kagawa Univ.)

Keywords:transparent conductive film, atmospheric pressure low temperature plasma

ZnO films were prepared by atmospheric pressure and low temperature plasma. Water vapor was added to the thin films, and the effects of the addition were investigated by measuring electrical resistivity, X-ray diffraction, and transmittance. The film became amorphous by the addition of water vapor, and the electrical resistivity decreased significantly.