[15a-E102-1~10] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[15a-E102-6] Effects of Postannealing on the Properties of Transparent Conductive
W-Doped In₂O₃ Films/glass substrates

〇(PC)Rajasekaran Palani¹, Yugo Okada², Makoto Maehara², Hisashi Kitami^1,2, Shintaro Kobayashi³, Katsuhiko Inaba³, Hisao Makino¹, Kimio Kinoshita², Tetsuya Yamamoto¹ (1.Kochi Univ. Tech., Res. Inst., 2.Sumitomo Heavy Industries, Ltd., 3.Rigaku Corp.)

Keywords:In2O3, Thin film

We have reported the characteristics of solid-phase-crystallization of In2O3-based thin films obtained on non-alkali glass substrates. Amorphous films were obtained in case of intentionally no-heating of substrate and then polycrystalline films were achieved after solid-phase crystallization. Analysis of the Hall effect measurements yield a typically size effect where the electrical resistivity is governed by the ratio = (film thickness (t)/carrier mean free path), regardless of the two different thin film structural states. This implies an important issue in terms of materials science, such as the possibility that the film structure state formation mechanism differs around the ratio of 1. In this talk, from the very recent results of transparent conductive W-doped In2O3 films with various thicknesses ranging from 5 to 50 nm, we will report the progress toward solving the above issues.