The 70th JSAP Spring Meeting 2023

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21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[16p-E102-1~12] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Thu. Mar 16, 2023 1:30 PM - 4:45 PM E102 (Building No. 12)

Takayoshi Oshima(NIMS), Kentaro Kaneko(Ritsumeikan Univ.)

4:00 PM - 4:15 PM

[16p-E102-10] Anisotropic HCl gas etching of (001) β-Ga2O3 substrate

〇Takayoshi Oshima1, Yuichi Oshima1 (1.NIMS)

Keywords:Ga2O3, etching

本研究では, (001)面基板に対して, HClガスを用いた異方性エッチングを行い, 加工方法としての可能性を検証した.