[17a-PB01-1~25] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[17a-PB01-9] Comparison of reduction states in SnOx thin films by N2 and Ar/H2 annealing

〇Kotaro Watanabe¹, Takuma Kawaguchi¹, Tomohiro Yamaguchi¹, Takeyoshi Onuma¹, Tohru Honda¹, Shinya Aikawa¹ (1.Kogakuin Univ.)

Keywords:N2 annealing, SnOX based materials