[17p-A301-1~18] 13.7 Compound and power devices, process technology and characterization

[17p-A301-13] Isolation of N-polar GaN HEMT by digital etching

〇Kosuke Saito¹, Sano Haruki¹, Nakagawa Ryo¹, Makabe Isao², Nakata Ken², Gotow Takahiro¹, Miyamoto Yasuyuki¹ (1.Tokyo Tech, 2.Sumitomo Electric Industries)

Keywords:N-polar GaN HEMT, digital etching

In isolation of N-polar GaN HEMTs, wet etching is a simpler process than dry etching or ion implantation, and is expected to suppress process damage. Although we have been using TMAH for isolation, it is not suitable for device applications because the surface is not etched uniformly and the sheet resistance is not sufficiently high. In this study, we investigate the effectiveness of digital etching for isolation and report the electrical properties of the fabricated N-polar GaN HEMTs.