[17p-A301-1~18] 13.7 Compound and power devices, process technology and characterization

[17p-A301-3] MOS channel characteristics of Mg-implanted lateral MOSFET activated by UHPA

〇Ryo Tanaka¹, Shinya Takashima¹, Katsunori Ueno¹, Tsurugi Kondo¹, Takuro Inamoto¹, Masaharu Edo¹, Michal Bockowski², Tetsu Kachi³ (1.Fuji Electric, 2.Unipress, 3.Nagoya Univ.)

Keywords:Gallium nitride, UHPA, MOSFET

For practical use of vertical GaN MOSFETs, p-type layer formation by ion implantation is being investigated. Ultra-high pressure annealing (UHPA) of about 1 GPa has been proposed as a method that can achieve high p-type activation, but at the same time, there are concerns about surface deterioration. In this presentation, we report the MOS channel characteristics of lateral MOSFETs fabricated by UHPA. The fabricated MOSFETs showed normal MOS channel behaviors with a positive threshold voltage.