[17p-A302-1~8] The leading-edge research on quantum science and technology based on quantum bits and spin defects in solid-state materials

[17p-A302-6] Creation of Spin Defects in Silicon Carbide and their Characterization

〇Takeshi Ohshima¹ (1.QST)

Keywords:spin defect, quantum sensing, silicon carbide

Since defects in which spins can be manipulated (spin defects) at room temperature can be created in wide bandgap semiconductors, intensive research and development on quantum bits and quantum sensors which can be operated at room temperature are carried out using such spin defects. In this talk, focusing on silicon carbide (SiC) as a host material for spin defects, the creation methodologies for spin defects in SiC using particle beams will be introduced. Also, the characterization and the manipulation of such spin defects will be discussed.