[17p-B309-1~19] 17.2 Graphene

[17p-B309-7] Scanning photoelectron microscopy analysis of graphene during gate-controlled photo-oxidation process

〇Naoka Nagamura^1,2,3, Shun Konno², Morihiro Matsumoto⁴, Wenxiong Zhang⁵, Masato Kotsugu², Masaharu Oshima⁵, Ryo Nouchi^3,4 (1.NIMS, 2.Tokyo Univ. of Sci., 3.JST PRESTO, 4.Osaka Met. Univ., 5.The Univ. of Tokyo)

Keywords:XPS, imaging, photo-oxidation

In a graphene field-effect-transistor (GFET) configuration, the photo-oxidation reaction evolves from the edges and has gate controllability by UV light irradiation under atmosphere. Bias voltage application results in edge-selective etching only at negative gate bias. In this study, chemical and electronic states of the gate voltage-driven photo-oxidized GFET structures were investigated using a synchrotron radiation scanning photoelectron microscopy with high spatial resolution to understand the reaction process. Our results reveal the process started from edge-selective hole-doping followed by defect introduction, oxidation, and etching.