[17p-B410-1~12] 13.8 Optical properties and light-emitting devices

[17p-B410-1] Room Temperature Photoluminescence of Implanted Lanthanoids in Aluminum Nitride

〇Shinichiro Sato¹, Kanako Shojiki^2,3, Ken-ichi Yoshida⁴, Hideaki Minagawa⁴, Hideto Miyake² (1.QST, 2.Mie Univ., 3.Osaka Univ., 4.ITC)

Keywords:Aluminum Nitride, Lanthanoids, Rare Earth Ions

Showing stable and narrow band photon emission at room temperature, lanthanoid doped nitride semiconductors have attracted attention in terms of quantum technologies as well as optical materials. However, the potential of aluminum nitrides (AlN) as host material for lanthanoids has not yet been fully explored. Here we show room temperature photoluminescence properties of lanthanoid (Pr, Nd, and Eu) implanted AlN after thermal annealing. Variation in PL intensity and spectrum with annealing temperatures is also explored.