[17p-B410-1~12] 13.8 Optical properties and light-emitting devices

△ [17p-B410-4] Optical and electrical characteristics of Al_xGa_1-x:Tb-based light-emitting diodes

〇Shunsuke Yamazaki¹, Shuhei Ichikawa^1,2, Takenori Iwaya¹, Yasufumi Fujiwara¹ (1.Graduate School of Engineering, Osaka Univ., 2.Research Center for UHVEM, Osaka Univ.)

Keywords:Rare earth, GaN, LED

Terbium ion shows emission with a narrow linewidth and a high wavelength stability against for temperature due to its intra-4f shell transition.To date, we have fabricated Tb-doped AlGaN (AlGaN:Tb) LEDs using organometallic vapor phase epitaxy method and reported Tb emission from them at room temperature. In this report, we have fabricated AlGaN:Tb LEDs with various Al compositions and evaluated the impact of Al composition on the optical and electrical characteristic of LEDs.