[17p-B414-1~15] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[17p-B414-10] Flattening of the band profile of Si(111) p-type space charge layer by the standing wave formation of valence electrons

〇Sakura-Nishino Takeda¹, Nur Idayu Ayob², Hiroshi Daimon¹, Takeshi Inagaki¹ (1.NAIST, 2.IIUM)

Keywords:band bending, p-type, nano

Semiconductor space charge layers are a core element of the FETs which support the modern IT society. We report our recent findings that the potential profile of the Si(111) p-type space charge layers have a flattened shape if the layer thickness is in nano-meter order[1]. The unique shape has found to be caused by the quantization of the valence electrons, and is ubiquitously formed in the p-type nano-FETs. We expect device models incormporating this findings will lead to more accurate device operation prediction in the subthreshold voltage region. [1] N. I. Ayob, et al. Jpn. J. Appl. Phys. 60, 064004 (2021).