The 70th JSAP Spring Meeting 2023

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Oral presentation

13 Semiconductors » 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[17p-B414-1~15] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

Fri. Mar 17, 2023 1:00 PM - 5:00 PM B414 (Building No. 2)

Koichiro Saga(Sony), Nobuya Mori(Osaka Univ.), Hajime Tanaka(阪大)

2:15 PM - 2:30 PM

▲ [17p-B414-6] The effect of post metallization annealing sequence on the Pt gate etching immunity of MFSFET with ferroelectric non-doped HfO2

〇Zhang Xinyue1, Joong-Won Shin1, Tanuma Masakazu1, Ohmi Shun-ichiro1 (1.Tokyo Inst. of Technology)

Keywords:Ferroelectric non-doped HfO2, MFSFET

The ferroelectric HfO2 is widely investigated due to its Si CMOS compatibility and scalability, the application for metal ferroelectric semiconductor field effect transistor (MFSFET) is also highly expected. We have previously reported the characteristics of MFSFET with 5nm ferroelectric non-doped HfO2. However, the wet etching damage of Pt gate is still issue in case of the etching for as-deposited Pt/HfO2 stacked layers.
In this research, we investigated the post metallization annealing (PMA) procedure to optimize the wet etching process.