[17p-B414-1~15] 13.1 Si系基礎物性・表面界面・シミュレーション

▲ [17p-B414-6] The effect of post metallization annealing sequence on the Pt gate etching immunity of MFSFET with ferroelectric non-doped HfO₂

〇Zhang Xinyue¹、Joong-Won Shin¹、Tanuma Masakazu¹、Ohmi Shun-ichiro¹ (1.Tokyo Inst. of Technology)

キーワード：Ferroelectric non-doped HfO2, MFSFET

The ferroelectric HfO₂ is widely investigated due to its Si CMOS compatibility and scalability, the application for metal ferroelectric semiconductor field effect transistor (MFSFET) is also highly expected. We have previously reported the characteristics of MFSFET with 5nm ferroelectric non-doped HfO_2. However, the wet etching damage of Pt gate is still issue in case of the etching for as-deposited Pt/HfO₂ stacked layers.
In this research, we investigated the post metallization annealing (PMA) procedure to optimize the wet etching process.