[17p-D704-1~16] 10.1 Emerging materials in spintronics and magnetics (including fabrication and characterization methodologies)

▼ [17p-D704-15] Development of BiFeO₃-Based Multiferroic Thin Films with Excellent Magnetic Properties and Investigation of Their Etching Resistance for Magnetic Nano Device Applications

〇(DC)Soumyaranjan Ratha¹, Riku Suzuki¹, Kotaro Takeda¹, Daichi Yamamoto¹, Munusamy Kuppan¹, Genta Egawa¹, Satoru Yoshimura¹ (1.Akita Univ.)

Keywords:Multiferroic thin films, Magnetic properties, Magnetic nano devices

The energy consumption is relatively high in magnetic field and spin current operated magnetic devices. The control of magnetization using electric field is a solution to reduce the energy consumptions. Bismuth Ferrite multiferroic thin films can be used as a candidate material for this application because it shows high ferroelectric Curie temperature of 1120 K and a high antiferromagnetic Neel temperature of 640 K. But the antiferromagnetic (G-type) configuration in BFO, is a barrier from application point of view, which can be solved by substituting atoms in A-site and/or B-site of BFO. In our previous study, we could increase the magnetic properties such as saturation magnetization of 90 emu/cm3, small in-plane magnetic anisotropy, magnetic Kerr rotational angle of 0.03° and Curie temperature of 350 °C in (Bi,Ba)FeO3 films by substituting Ba in A-site of BFO. But these magnetic properties were not sufficient from application point of view. We also could improve the magnetic properties in BFO-based films by substituting suitable Lanthanides in A-site and Cobalt in B-site at an optimized concentration of around 50 at% and around 25 at% respectively. In this study, we found some suitable film materials for various magnetic devices applications. Following successful sample manufacturing, we investigated the resistance of the films against etching for microfabrication to apply the films to magnetic nano devices.