[17p-PA06-1~14] 6.1 Ferroelectric thin films

[17p-PA06-11] Growth mechanism of ALD-HfO₂ thin films
deposited by restricting the growth space near the substrate

〇Ryuto Ichikawa¹, Shuya Takarae², Keigo Naito¹, Takeshi Yoshimura¹, Norifumi Fujimura¹ (1.Osaka Metropolitan Univ., 2.Osaka Pref. Univ.)

Keywords:Hf-based ferroelectrics, atomic layer deposition method