[17p-PB07-1~15] 15.4 III-V-group nitride crystals

[17p-PB07-1] High efficiency photo luminescence of InGaN/GaN quantum wells by depositing dielectric thin films and UV laser irradiations

〇Kenta Mitoda¹, Seiya Kaito¹, Tetsuya Matsuyama¹, Kenji Wada¹, Mitsuru Funato², Yoichi Kawakami², Koichi Okamoto¹ (1.Osaka Metropolitan Univ., 2.Kyoto Univ.)

Keywords:nitride semiconductor, high efficiency photo luminescence, dielectric thin films