[18a-A301-1~13] 13.7 Compound and power devices, process technology and characterization

[18a-A301-1] [The 44th Young Scientist Award Speech] High-Efficiency GaN Power Amplifiers Based on GaN-on-GaN HEMTs

〇Yusuke Kumazaki¹, Toshihiro Ohki¹, Junji Kotani¹, Shiro Ozaki¹, Yuichi Minoura¹, Masato Nishimori¹, Naoya Okamoto¹, Masaru Sato¹, Norikazu Nakamura¹ (1.Fujitsu Ltd.)

Keywords:GaN, HEMTs, Power amplifiers

This paper demonstrates highly efficient GaN high-electron-mobility transistors (HEMTs) on GaN substrates with reduced interface contamination. By applying a hydrofluoric acid-based pre-growth treatment to a GaN substrate, the Si impurity concentration at the interface between the GaN substrate and the epitaxial layer can successfully be reduced. RF performance was enhanced by pre-growth treatment owing to the suppression of Si-induced parasitic loss. As a result, GaN HEMTs on GaN substrates exhibited an excellent power-added efficiency (PAE) of 82.8% at a 2.45GHz. To the best of our knowledge, this exceeds that of the previously reported discrete GaN HEMTs at around this frequency range.