[18a-A301-1~13] 13.7 Compound and power devices, process technology and characterization

[18a-A301-12] Comparison between Y₂₂ and Transient Signals for Trapping Response in GaN HEMT

〇Toshiyuki Oishi¹, Kaji Daiki¹, Masaya Tabuchi¹, Tomohiro Otsuka², Yutaro Yamaguchi², Shitaro Shinjo², Yamanaka Koji² (1.Saga Univ., 2.Mitsubishi Electric Corp.)

Keywords:GaN HEMT, Trap

Low-frequency Y₂₂ parameter measurement can be estimated on GaN traps in GaN devices. In this study, we have compared Y₂₂ signals in this method and drain lag in transient response. Similar trends were obtained when DC bias for Y₂₂ measurement was the same as the end bias in the transient response.