Toshiyuki Oishi

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Speaker, Author, Co-Author

Sat. Mar 18, 2023 9:00 AM - 12:30 PM A301 (Building No. 6)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power devices, process technology and characterization

[18a-A301-1~13] 13.7 Compound and power devices, process technology and characterization

12:00 PM - 12:15 PM

[18a-A301-12] Comparison between Y₂₂ and Transient Signals for Trapping Response in GaN HEMT

〇Toshiyuki Oishi¹, Kaji Daiki¹, Masaya Tabuchi¹, Tomohiro Otsuka², Yutaro Yamaguchi², Shitaro Shinjo², Yamanaka Koji² (1.Saga Univ., 2.Mitsubishi Electric Corp.)